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Hi all
In my board i use SDRAM k4s561632E-tc75 - it have 256Mbit size Datawidth 16 Banks -4 Row 13 Col 9 I use 2 chips so 2 Chip selects I have verilog behaviour model of it And it has next timing parameters `define tCCmin 7.5 // clock minimum cycle time `define tCCmax 1000 // clock maximun cycle time `define tCC3 7.5 // clock minimun cycle time at cas latency=3 `define tCC2 10 // clock minimun cycle time at cas latency=2 `define tCH 2.5 // clock high pulse width `define tCL 2.5 // clock low pulse width `define tSS 1.5 // input setup time `define tSH 0.8 // input hold time `define tRRD 15 // row to row delay(min) `define tRCD 20 // ras to cas delay(min) `define tRP 20 // row precharge time(min) `define tRASmin 45 // row active minimum time `define tRASmax 100000 // row active maximum time `define tRC 65 // row cycle time(min) `define tCCD 7.5 // col. address to col. address delay: `define tSAC2 6 `define tSAC3 5.4 `define tSHZ2 6 `define tSHZ3 5.4 And i can't find correspondence with SOPC SDRAM parameters i'm know how SDRAM works in idea only and i don't know how exactly it working so can someone help me to find correspondence with next parameters, please Cas latency cycles 3 (it's looks correct ) Initialization refresh cycles 7 (i assign big value but may be i'ts incorrect) Issue one refresh commant every 7.8125 (i set it like 64ms/8192 cyles so it looks correct ) Delay after powerup,before initialization 100 us (not changes ) Duration of refresh command (t_rfc) 80 (don't know ) Duration of precharge command (t_rp) 20 (don't know ) ACTIVE to READ or WRITE delay (t_rcd) 20 (don't know ) Access time (t_ac) 6 (don't know ) Write recovery time (t_wr, NoautoPrecharge) 20 (i don't know) Can someone correct my parameters or tell how and where get it , because i saw datasheets and i did't saw that paramereres in clear form.Link Copied
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